Infineon ISC007N04NM6: High-Performance N-Channel OptiMOS 6 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics demands continuous innovation in power semiconductor technology. Addressing this need, Infineon Technologies introduces the ISC007N04NM6, a benchmark N-Channel power MOSFET from its advanced OptiMOS™ 6 40 V family. This device is engineered to set new standards in performance for a wide range of power conversion applications, including server and telecom power supplies, motor drives, synchronous rectification, and battery management systems.

At the core of the ISC007N04NM6 is Infineon's cutting-edge silicon technology, which achieves an exceptional balance between low switching losses and superior conduction performance. The device boasts an ultra-low typical on-state resistance (RDS(on)) of just 0.47 mΩ at 10 V, significantly reducing conduction losses. This is complemented by an outstanding gate charge (Q_G) of 38 nC, which ensures swift switching transitions and minimizes driving losses. The optimal figure-of-merit (FOM = RDS(on) × QG) makes this MOSFET a top-tier choice for high-frequency switching circuits, enabling designers to push the boundaries of efficiency and thermal management.

The benefits extend beyond raw electrical characteristics. The OptiMOS™ 6 technology provides enhanced robustness and reliability. Features like a high peak current capability and an avalanche-rated design ensure operational stability under the most demanding conditions, including overloads and voltage spikes. The MOSFET is also housed in a SuperSO8 package, which offers a compact footprint while providing superior thermal resistance, allowing for more effective heat dissipation from the die to the PCB. This leads to higher power density designs as less space is required for cooling.

Furthermore, the device is optimized for use in synchronous rectification stages of switch-mode power supplies (SMPS), where its fast body diode characteristics help to reduce reverse recovery losses. This is critical for achieving high efficiency targets in modern 80 Plus Titanium and Platinum grade power supplies. For designers, this translates into systems that are not only more energy-efficient but also cooler, more reliable, and potentially smaller.

ICGOOODFIND: The Infineon ISC007N04NM6 stands out as a premier solution for engineers aiming to maximize efficiency and power density. Its industry-leading low RDS(on) and excellent switching performance, packaged in a thermally efficient SuperSO8, make it an indispensable component for the next generation of high-performance power conversion systems.

Keywords: Power MOSFET, OptiMOS™ 6, Efficient Power Conversion, Low RDS(on), Synchronous Rectification.