Infineon BSZ42DN25NS3G: High-Efficiency 25V OptiMOS Power MOSFET for Advanced Switching Applications

The demand for higher efficiency and power density in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, the Infineon BSZ42DN25NS3G stands out as a high-performance 25V OptiMOS power MOSFET engineered for advanced switching applications. Combining low on-state resistance, exceptional switching characteristics, and robust thermal performance, this device is optimized for use in synchronous rectification, DC-DC converters, motor drives, and load switching systems where energy efficiency and reliability are paramount.

A key highlight of the BSZ42DN25NS3G is its extremely low typical RDS(on) of 0.55 mΩ at 10 V, significantly reducing conduction losses and improving overall system efficiency. This is particularly beneficial in high-current applications such as server power supplies, telecom infrastructure, and automotive power management systems. The MOSFET’s low gate charge (Qg) and figure of merit (FOM) ensure minimal switching losses, enabling higher frequency operation and contributing to more compact power supply designs.

Packaged in the space-saving SuperSO8 (LFPAK) housing, the device offers an excellent power-to-size ratio, making it suitable for applications with strict board space constraints. Its enhanced avalanche ruggedness and high body diode robustness further improve system reliability under demanding conditions.

ICGOOODFIND:

The Infineon BSZ42DN25NS3G sets a benchmark for high-efficiency power switching with its ultra-low RDS(on), superior thermal performance, and compact form factor, making it an ideal solution for next-generation power management designs.

Keywords:

Power MOSFET, High Efficiency, Low RDS(on), Synchronous Rectification, DC-DC Converters