Infineon BSS192PH6327 P-Channel Power MOSFET: Datasheet, Pinout, and Application Circuit Guide
The Infineon BSS192PH6327 is a P-Channel enhancement mode Power MOSFET housed in a compact SOT-363 (SC-88) package. Engineered with Infineon's advanced proprietary MOSFET technology, this device is designed for high-performance power management in a minimal footprint. It is particularly suited for low-voltage, high-density applications where board space and efficiency are at a premium.
This guide provides a detailed overview of its datasheet specifications, pinout configuration, and a practical application circuit.
Datasheet Overview and Key Specifications
The BSS192PH6327 is characterized by its very low on-state resistance (RDS(on)) and high current handling capability relative to its size. Key absolute maximum ratings and electrical characteristics include:
Drain-Source Voltage (VDS): -20 V
Gate-Source Voltage (VGS): ±8 V
Continuous Drain Current (ID): -2.8 A (at Tmb = 25°C)
On-State Resistance (RDS(on)): Typically 52 mΩ at VGS = -4.5 V, ID = -2.5 A
Threshold Voltage (VGS(th)): Typically -0.95 V (max -1.5 V), making it compatible with standard 3.3V and 5V logic levels.
Total Power Dissipation (Ptot): 1 W
These specifications make it an excellent choice for load switching, power management in portable devices, battery protection circuits, and DC-DC conversion.
Pinout Configuration
The BSS192PH6327 is offered in a SOT-363 (SC-88) surface-mount package, which contains six pins. However, internally, the pins are connected to form a dual MOSFET configuration. It is essentially two identical P-Channel MOSFETs in one package.
The standard pinout for the dual P-Channel SOT-363 is:
Pin 1 (Source 1): Source of the first MOSFET.
Pin 2 (Gate 1): Gate of the first MOSFET.
Pin 3 (Drain 1): Drain of the first MOSFET.
Pin 4 (Drain 2): Drain of the second MOSFET.
Pin 5 (Gate 2): Gate of the second MOSFET.
Pin 6 (Source 2): Source of the second MOSFET.
Critical Note: It is common practice to connect the two MOSFETs in parallel to reduce the overall RDS(on) and increase current-carrying capacity. This is done by connecting Pins 1 & 6 (Sources), Pins 2 & 5 (Gates), and Pins 3 & 4 (Drains).
Application Circuit Guide: A Basic Load Switch
One of the most common uses for the BSS192PH6327 is as a high-side load switch. This circuit allows a low-voltage microcontroller (e.g., 3.3V) to control a higher-power load (e.g., 5V or 12V) connected to the same ground.
Circuit Operation:
1. Components: The main components are the BSS192PH6327 (with pins paralleled), a microcontroller GPIO pin, a pull-up resistor (R1, e.g., 10kΩ), and a gate protection resistor (R2, e.g., 100Ω).
2. Default State (Load OFF): When the microcontroller GPIO is configured as high-impedance (input) or set to logic HIGH, the pull-up resistor R1 pulls the Gate voltage to the positive supply (VDD). For a P-Channel MOSFET, a VGS ≥ 0 V turns the device OFF, preventing current from flowing to the load.
3. Activation (Load ON): When the microcontroller GPIO outputs a logic LOW (0V), it actively pulls the Gate voltage down to near ground. This creates a negative VGS (e.g., -5V if VDD is 5V), which fully enhances the MOSFET, turning it ON. Current can now flow from the power supply (VDD), through the MOSFET, to the load.
4. Purpose of R2: Resistor R2 in series with the gate limits inrush current during switching, dampening oscillations and protecting the microcontroller pin from voltage spikes.
This simple circuit provides a robust and efficient method for power gating various components like sensors, motors, or LEDs in a system.
ICGOODFIND: The Infineon BSS192PH6327 stands out as a highly efficient and compact P-Channel MOSFET solution. Its exceptionally low RDS(on) in a tiny SOT-363 package makes it a superior choice for space-constrained, battery-powered applications requiring minimal voltage drop and high switching performance. When designing with this component, remember to leverage its dual-MOSFET design by paralleling the channels for optimal performance in load switch circuits.
Keywords:
1. P-Channel MOSFET
2. Load Switch
3. Low RDS(on)
4. SOT-363
5. Power Management
