Infineon IPL65R195C7AUMA1 CoolMOS™ P7 650V Power Transistor: Datasheet, Application Circuit, and Design Considerations

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of high-voltage MOSFET technology. The Infineon IPL65R195C7AUMA1, a member of the CoolMOS™ P7 family, stands as a pinnacle of this progress, offering designers a superior 650V superjunction MOSFET for a wide array of demanding applications. This article delves into its key specifications, a typical application circuit, and crucial design considerations.

Datasheet Highlights and Key Features

The datasheet for the IPL65R195C7AUMA1 reveals a component engineered for exceptional performance. Its core advantage lies in achieving an ultra-low specific on-state resistance (R DS(on)) of just 195 mΩ (max. at T J = 25°C) in a compact TOLL (TO-leadless) package. This directly translates to minimized conduction losses, a primary factor in achieving high efficiency.

Beyond low R DS(on), the CoolMOS™ P7 technology incorporates several groundbreaking features:

Superjunction (SJ) Principle: This technology enables a drastic reduction in switching and conduction losses compared to traditional planar MOSFETs, allowing for higher switching frequencies and, consequently, smaller magnetic components.

Integrated Fast Body Diode: The device features a diode with excellent reverse recovery characteristics, reducing switching losses and voltage overshoots in hard-switching topologies like power factor correction (PFC) circuits.

High Robustness and Reliability: It offers a high pulse current handling capability and an extended avalanche ruggedness, ensuring stable operation under extreme conditions. Its high maximum junction temperature (T J = 175°C) provides an additional design margin.

Optimized Gate Charge (Q G): A low and well-optimized gate charge simplifies drive circuit design and minimizes driving losses.

Typical Application Circuit: A PFC Stage Example

A primary application for the IPL65R195C7AUMA1 is in the boost stage of a Totem-Pole Power Factor Correction (PFC) circuit, which is prevalent in server power supplies, telecom rectifiers, and industrial drives.

In a continuous conduction mode (CCM) totem-pole PFC setup, two IPL65R195C7AUMA1 MOSFETs are often used as the high-frequency switching legs. Their low R DS(on) minimizes conduction losses during the active switch-on period. Crucially, the integrated fast body diode allows the other MOSFET to conduct reversely during the dead time with minimal reverse recovery charge (Q rr), which is vital for preventing catastrophic shoot-through currents and achieving high efficiency in this critical topology. The driver IC must be capable of sourcing and sinking sufficient peak current to quickly charge and discharge the MOSFET's input capacitance, leveraging its low Q G.

Essential Design Considerations

1. Gate Driving: While the Q G is low, a proper gate driver is mandatory. A driver with a minimum peak current of 2A-3A is recommended to ensure swift switching and avoid operating in the linear region for too long. A gate resistor (e.g., 5-10 Ω) is used to control the switching speed and mitigate EMI, though its value is a trade-off between switching losses and noise.

2. Layout Parasitics: The high switching speed (dv/dt and di/dt) of the CoolMOS™ P7 makes the PCB layout critical. Minimizing parasitic inductance in the power loop (drain-source circuit) and the gate loop is paramount. This involves using a tight layout, wide copper pours, and strategic placement of decoupling capacitors close to the device pins to suppress voltage spikes and oscillations.

3. Thermal Management: Despite its high efficiency, managing power dissipation is essential. The TOLL package offers a low thermal resistance from junction to case (R thJC) and an exposed top pad for excellent heat transfer to an external heatsink. Proper mounting and thermal interface material are necessary to utilize the full T J(max) capability.

4. Avalanche and Overcurrent Protection: Although robust, the MOSFET should be protected from abnormal conditions like overcurrent and overvoltage transients. External circuitry, such as desaturation detection or current sensing, should be implemented to ensure safe operation within the Absolute Maximum Ratings outlined in the datasheet.

ICGOOODFIND

The Infineon IPL65R195C7AUMA1 CoolMOS™ P7 sets a new benchmark for 650V power transistors, masterfully balancing ultra-low conduction losses, fast switching capability, and immense ruggedness. Its characteristics make it an ideal choice for high-efficiency, high-power-density designs, including server PSUs, EV chargers, industrial motor drives, and solar inverters. Successfully leveraging its performance hinges on meticulous attention to gate driving, PCB layout, and thermal management.

Keywords:

1. CoolMOS™ P7

2. Ultra-low R DS(on)

3. Fast Body Diode

4. Totem-Pole PFC

5. Thermal Management