Infineon BB535E7904: Technical Datasheet and Application Overview
The Infineon BB535E7904 represents a highly integrated RF component designed to meet the demanding requirements of modern wireless communication systems. As part of Infineon’s extensive portfolio of semiconductor solutions, this device excels in performance, efficiency, and reliability, making it a preferred choice for RF design engineers.
Technical Datasheet Overview
The BB535E7904 is a silicon germanium (SiGe) low-noise amplifier (LNA) tailored for cellular infrastructure applications, including base stations and repeaters. Operating within a frequency range of 700 MHz to 2700 MHz, it covers all major cellular bands, including LTE, 3G, and 2G. Key electrical characteristics include a low noise figure of 0.6 dB, which is critical for enhancing receiver sensitivity and overall signal integrity. With a high gain of up to 22 dB, the LNA ensures minimal signal loss and superior amplification of weak incoming signals.
The device is built using advanced SiGe:C technology, providing excellent linearity and efficiency. It features a high output third-order intercept point (OIP3) of 38 dBm, enabling robust performance in the presence of strong interfering signals. The BB535E7904 is supplied in a compact, surface-mount PG-VQFN-12 package, which is optimized for space-constrained PCB designs. Its operational supply voltage ranges from 3.3 V to 5 V, with a typical current consumption of 82 mA, striking a balance between power consumption and performance.
Application Overview
The primary application of the BB535E7904 is in the receive path of cellular base stations. Its low noise figure and high gain make it ideal for improving the uplink sensitivity of macro, micro, and small cell base stations. By amplifying weak signals from mobile devices with minimal added noise, it extends coverage range and enhances data throughput.
Furthermore, this LNA is well-suited for repeater and booster systems, where signal amplification is necessary to overcome path loss in challenging environments. It is also used in distributed antenna systems (DAS) to ensure consistent indoor and outdoor wireless coverage. The device’s broad frequency support allows it to be deployed in multi-band equipment, reducing component count and simplifying design.
The integration of internal matching components minimizes external part requirements, streamlining the PCB layout and reducing overall bill-of-materials costs. Additionally, the BB535E7904 is designed for high reliability and stability under varying environmental conditions, making it suitable for industrial and telecommunications infrastructure.
The Infineon BB535E7904 stands out as a high-performance, low-noise amplifier that delivers exceptional RF characteristics for critical communication infrastructure. Its combination of low noise, high gain, and robust linearity ensures superior signal integrity across diverse cellular applications.
Keywords
1. Low-Noise Amplifier (LNA)
2. Cellular Infrastructure
3. Noise Figure
4. SiGe Technology
5. RF Performance
