Infineon IPW60R125CFD7 650V CoolMOS™ CFD7 Power Transistor: Datasheet, Application Notes, and Design Resources

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ CFD7 series, with the IPW60R125CFD7 standing out as a premier 650V superjunction MOSFET engineered to meet the demanding requirements of modern switch-mode power supplies (SMPS), server and telecom power systems, industrial drives, and renewable energy applications.

This device represents a significant leap forward by combining the best traits of a fast-switching MOSFET with the robust intrinsic body diode of a conventional SJ MOSFET. The "CFD" stands for "Fast Body Diode" and "Fast Switching," a hallmark of this technology. The IPW60R125CFD7 boasts an exceptionally low on-state resistance (R DS(on)) of just 125mΩ (max. at 25°C), which directly translates to reduced conduction losses. This is achieved alongside a superior figure-of-merit (FoM), balancing R DS(on) and gate charge (Q G), enabling unmatched efficiency in hard- and soft-switching topologies.

Key Features and Datasheet Insights:

A deep dive into the official datasheet reveals the transistor's core strengths:

Voltage and Current Rating: 650V drain-source voltage (V DS) with a continuous drain current (I D) of 18A at 100°C.

Superior Switching Performance: Extremely low gate charge (Q G = 43nC typ.) and low effective output capacitance (C OSS(eff)) ensure minimal switching losses, allowing for higher operating frequencies and, consequently, smaller magnetics and passive components.

Robust Intrinsic Body Diode: The technology features a fast and rugged body diode with excellent reverse recovery characteristics (Q rr = 1.3μC typ., I RM = 6.5A typ.). This makes it highly resilient and an excellent candidate for circuits like power factor correction (PFC) and bridge topologies where the body diode conducts, significantly enhancing reliability and reducing the need for external anti-parallel diodes.

Improved EMI Behavior: The optimized capacitance curve and smooth switching behavior contribute to lower electromagnetic interference, simplifying filter design and compliance with regulatory standards.

Application Notes and Design Resources:

Successful implementation of high-performance transistors requires careful design consideration. Infineon provides comprehensive application notes and design resources to empower engineers. These documents cover critical topics such as:

Gate Driving Considerations: Guidelines for selecting the right gate driver IC and designing the gate drive circuit to optimize switching speed while avoiding parasitic turn-on and overshoot.

Thermal Management: Strategies for effective PCB layout to minimize parasitic inductance and maximize heat dissipation from the exposed top-side cooling pad (ThinPAK 8x8 package).

Utilization in Topologies: Detailed insights into using the CFD7 in interleaved PFC stages, LLC resonant converters, and phase-shifted full-bridge circuits, highlighting performance advantages over previous generations.

SPICE Models and Simulation Tools: Accurate simulation models are available to streamline the design process, allowing engineers to predict performance and optimize their circuits before prototyping.

ICGOOODFIND

The Infineon IPW60R125CFD7 is a pinnacle of power transistor technology, offering a rare combination of high efficiency, robust reliability, and design flexibility. Its advanced fast body diode and exceptional switching FoM make it an indispensable component for engineers pushing the boundaries of power density and performance in next-generation power conversion systems.

Keywords:

CoolMOS™ CFD7, Fast Body Diode, High Efficiency, Power Density, Superjunction MOSFET