Infineon IPB80N08S2-07 Power MOSFET: Datasheet, Pinout, and Application Circuit Analysis
The Infineon IPB80N08S2-07 is a benchmark N-channel power MOSFET designed for high-efficiency power conversion and switching applications. Leveraging Infineon's advanced OptiMOS 2 technology, this component sets a high standard for performance, offering an exceptional balance of low on-state resistance and high switching speed. This article provides a detailed examination of its datasheet, pinout configuration, and a practical application circuit analysis.
Datasheet Overview and Key Specifications
The datasheet for the IPB80N08S2-07 reveals its core electrical characteristics, which are critical for circuit designers. The device is housed in a TO-263 (D2PAK) package, renowned for its excellent power dissipation capabilities. Its most defining feature is its extremely low typical on-state resistance (RDS(on)) of just 7.0 mΩ at a gate-source voltage (VGS) of 10 V. This low RDS(on) is the primary contributor to minimizing conduction losses, making the MOSFET highly efficient, especially in high-current scenarios.
Other vital specifications from the datasheet include:
Drain-Source Voltage (VDS): 80 V
Continuous Drain Current (ID): 80 A at a case temperature (TC) of 25°C
Avalanche Energy Rated: Robustness against inductive switching events.
Low Gate Charge (Qg): Facilitates fast switching and reduces driving losses.
Pinout Configuration
The pinout for the TO-263 package is straightforward:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage typically above 10V relative to the source turns the device on.
2. Drain (D): This is the output pin connected to the load. It is electrically isolated from the tab of the package.
3. Source (S): This is the common ground/reference pin. Crucially, the metal tab of the package is internally connected to the Source (S) pin. This is a critical detail for PCB layout, as the tab must be soldered to a large copper area (a thermal pad) on the PCB that is connected to the source potential to ensure effective heat sinking and electrical connection.
Application Circuit Analysis: A Simplified DC-DC Buck Converter
A common application for the IPB80N08S2-07 is as the high-side switch in a synchronous buck converter, a topology ubiquitous in voltage regulator modules (VRMs) and power supplies.
Circuit Operation:
1. Switching Phase: When the PWM controller applies a voltage (e.g., 12V) to the Gate pin, the MOSFET turns on. Current flows from the input voltage rail (e.g., 12V), through the MOSFET (from Drain to Source), to the inductor and load. The low RDS(on) ensures minimal voltage drop and power loss during this phase.
2. Off Phase: The PWM controller turns the MOSFET off. The current path through the inductor is maintained by the low-side switch (often another MOSFET in a synchronous design).
Why the IPB80N08S2-07 Excels Here:
Efficiency: The combination of low RDS(on) and low gate charge directly translates to lower conduction and switching losses, boosting the overall efficiency of the converter.
Power Handling: The 80A current rating and the TO-263 package allow the circuit to handle significant output power without overheating.
Reliability: The 80V VDS rating provides a comfortable safety margin for input voltage transients in a 12V or even 24V input system, enhancing circuit robustness.
ICGOOODFIND
The Infineon IPB80N08S2-07 stands as a superior choice for power designers seeking to optimize for high current and high efficiency. Its exceptional electrical characteristics, combined with a package designed for thermal performance, make it an ideal solution for demanding applications like DC-DC converters, motor control, and high-current switching power supplies. Careful attention to datasheet details, especially the source-connected tab, is paramount for a successful and reliable implementation.
Keywords:
Power MOSFET
RDS(on)
OptiMOS 2
Buck Converter
TO-263 Package
