Infineon IPB65R150CFD: A High-Performance 650V CoolMOS™ CFD2 Power Transistor

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon's IPB65R150CFD, a 650V CoolMOS™ CFD2 power transistor engineered to set new benchmarks in performance for a wide range of demanding applications.

Built upon Infineon's revolutionary superjunction (SJ) principle, the CoolMOS™ CFD2 series represents a significant leap forward from standard MOSFETs. The IPB65R150CFD, in particular, is designed to excel in challenging switched-mode power supplies (SMPS), server and telecom power systems, industrial motor drives, and solar inverters. Its core advantage lies in its exceptional combination of low effective on-state resistance (R DS(on)) and minimal switching losses. With a maximum R DS(on) of just 150mΩ, it ensures highly efficient conduction, directly reducing power dissipation and heat generation.

A defining feature of the CFD2 technology is its integrated fast body diode. This is a critical differentiator, as it provides outstanding reverse recovery characteristics. The diode exhibits an extremely soft recovery behavior and a low reverse recovery charge (Qrr). This translates to significantly reduced switching losses in hard-switching topologies like power factor correction (PFC) circuits and minimizes electromagnetic interference (EMI), simplifying filter design and compliance.

Furthermore, the device boasts enhanced ruggedness and avalanche energy capability. This robustness makes it highly suitable for environments prone to voltage spikes and unpredictable load conditions, ensuring long-term system reliability and durability. The IPB65R150CFD is also optimized for ease of use, featuring a low gate charge (Q G) which allows for simpler, more efficient gate drive circuitry and enables higher switching frequencies. This capability is paramount for designers aiming to shrink the size of magnetic components and capacitors, thereby increasing overall power density.

Housed in a TO-263-3 (D2PAK) package, the transistor offers a excellent thermal performance, facilitating effective heat dissipation away from the silicon die.

ICGOOODFIND: The Infineon IPB65R150CFD CoolMOS™ CFD2 is a premier choice for engineers demanding top-tier efficiency and robustness. Its industry-leading low R DS(on), superior integrated body diode performance, and enhanced switching characteristics make it an indispensable component for designing next-generation, high-density, and highly efficient power conversion systems.

Keywords: CoolMOS™ CFD2, Low RDS(on), Integrated Body Diode, High Efficiency, Power Density.