Infineon BC817K-25: A Comprehensive Technical Overview

The Infineon BC817K-25 is a widely adopted NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. As a fundamental component in modern electronics, its popularity stems from a reliable performance profile tailored for low-power, low-voltage circuits. This overview delves into its key specifications, electrical characteristics, and typical use cases.

Housed in a compact SOT-23 surface-mount device (SMD) package, the BC817K-25 is optimized for high-density PCB designs. This small form factor makes it ideal for consumer electronics, such as smartphones, tablets, and portable audio devices, where board space is at a premium. The device is characterized by its high current gain (hFE), which is categorized by the suffix "-25" denoting a gain range of 160 to 400 at a collector current of 2 mA. This high gain makes it exceptionally efficient for amplifying small signals.

Electrically, the transistor supports a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA, which is substantial for a small-signal transistor. This allows it to handle a variety of loads in switching applications, including driving relays, LEDs, or small motors. The device also features low saturation voltage, enhancing its efficiency in switching roles by minimizing power loss in the on-state.

Furthermore, the BC817K-25 is often used in conjunction with its PNP complement, the BC807 series, to create push-pull amplifier stages or complementary switching circuits. Its performance is guaranteed across a wide temperature range, typically from -55°C to +150°C, ensuring stability and reliability in diverse operating environments.

ICGOODFIND: The Infineon BC817K-25 stands out as a robust, versatile, and cost-effective solution for designers seeking a reliable SMD transistor for amplification and low-power switching. Its combination of high gain, adequate voltage/current ratings, and a compact package ensures its continued relevance in countless electronic designs.

Keywords: NPN Bipolar Transistor, SOT-23 Package, High Current Gain, Low-Power Switching, General-Purpose Amplification